Smart Lighting System
Stable and uniform illumination
Polar, longitudinatand lateral testing capabilities
4× High brightness
Multifunctional Microscope System
Auto-focus
Linearly polarized light and circularly polarized light
lmprovement of phase aberration correction
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N
Vector Magnetic Field System
In-plane magnetic field up to 0.7 T
In-plane vector magnet field up to 0.4 T
Perpendicular magnetic field up to 1.2 T
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S
Application Examples
(a)
(b)
Perpendicular magnetic anisotropy films
(Ferromagnetic/ferrimagnetic thin film)
(a) Field drives domain wall motion. Dendritic magnetic domain at Ta (4 nm)/CoFeB (0.7 nm)/MgO (2 nm)/Ta (2 nm) heterostructure. The colored stripes indicate the magnetic domain walls. The small white arrows indicate the direction of the magnetic moment in the Neel domain walls and indicate the direction in which the magnetic domains move.
(b) Skyrmions-based memory (SK-RM). Labyrinth-like domain at CoTb (6 nm)/SiN (4 nm). The 1 μm size of skyrmions bubble has been captured, which can be formed at near-zero fields.
In-plane magnetic anisotropy films
(a)
(b)
(c)
(a) Longitudinal Kerr setup
(b) Magnetic field drives domain wall motion in Pt(4 nm)/Co (5 nm)/Ta(2 nm) sample. The domain wall contrast is significant and it is easy to distinguish the directions of magnetic.
(c) shows the Kerr signal vs magnetic field, where Kerr signal is normalized.
Kerr imaging of two-dimensional ferromagnetic films CrTe2 at low temperature
(a)
(b)
Domain wall switching of two-dimensional ferromagnetic films CuCr2Te/Cr2Te3
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The Two-dimensional ferromagnetic material opens a new door for next spintronics. The special structure brings a great challenge for magnetic characterization.
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Magnetic field drives domain wall motion in CuCr2Te/Cr2Te3 films at 290 K. Doman wll image (a) at 180 Oe and (b) at -180 Oe state.
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TTT-02-Kerr Microscope is suitable for low temperature.
In-plane magnetic anisotropy films
(a)
(b)
(c)
Hall measurements and current induced magnetization switching in L10 FePt.
(a) Schematic for measurements of current induced magnetization switching that simultaneously recorded by Hall voltage measurement and Kerr microscopy imaging.
(b) RH versus pulsed DC current I. The assisted external magnetic field is indicated with each curve.
(c) Kerr images recorded for the states 1-5 as indicated in (b)
Gradient spin current accumulation
(a)
(b)
(c)
(d)
(e)
(a) Pt(up to 3.2 nm)/Co(0.6 nm)/Pt(1.5 nm) wedged sample set up
(b) and (d) show the magnetic domain wall explanation with different direction of DC current (I=10 mA，Hx= 0 Oe)/( I=22 mA，Hx= 0 Oe). When the DC current is small, the magnetic domain wall grows at the cross. As the DC current increase, the magnetic domain wall grows at the one side of the Hall bar arm.
(c) and (e) show the anomalous Hall resistance with small/high DC current, when the Hx= Oe. (I=10
Gradient spin current accumulation
(a)
(b)
(c)
(d)
(e)
(f)
(a) Dzyaloshinskii-Moriya Interaction（DMI）experiment set up
(b) shows the different velocity of the left and right domain wall motion at a high external magnetic field Hx.
(c)(d)(e)(f) show the SOT effective field by using ± DC current. And at same time, one can get the DMI effective filed.
